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PDTC114YT,215, TRANS PREBIAS NPN 50V TO236AB

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT Описание Транзистор: NPN, биполярный, BRT, 50В, 0,1А, 250мВт, SOT23, R1: 10кОм Характеристики Категория Транзистор Тип биполярный Вид NPN

Категория	Транзистор
Тип	биполярный
Вид	NPN
Collector-Emitter Breakdown Voltage	50V
Maximum DC Collector Current	100mA
Pd - Power Dissipation	250mW
Transistor Type	NPN - Pre-Biased
Base Product Number	PDTC114 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	1ВµA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 5V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	250mW
REACH Status	REACH Unaffected
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47 kOhms
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-236AB
Vce Saturation (Max) @ Ib, Ic	100mV @ 250ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Maximum Collector Emitter Voltage	50 V
Maximum Emitter Base Voltage	10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Package Type	SOT-23(TO-236AB)
Pin Count	3
Transistor Configuration	Single
Typical Input Resistor	10 kΩ
Typical Resistor Ratio	0.21, 1
Вес, г	1