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PDTD123ET,215, Bipolar Transistors - Pre-Biased PDTD123ET/SOT23/TO-236AB

Semiconductors\Discrete Semiconductors Описание Транзистор: NPN, биполярный, BRT, 50В, 0,5А, 250мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид NPN

Категория	Транзистор
Тип	биполярный
Вид	NPN
Brand	Nexperia
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Single
Continuous Collector Current	500 mA
DC Collector/Base Gain Hfe Min	40
Emitter- Base Voltage VEBO	10 V
Factory Pack Quantity	3000
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Packaging	Cut Tape or Reel
Part # Aliases	PDTD123ET T/R
Pd - Power Dissipation	250 mW
Peak DC Collector Current	500 mA
Product Category	Bipolar Transistors-Pre-Biased
Product Type	BJTs-Bipolar Transistors-Pre-Biased
Qualification	AEC-Q101
Subcategory	Transistors
Transistor Polarity	NPN
Typical Input Resistor	2.2 kOhms
Typical Resistor Ratio	1
Maximum Collector Emitter Voltage	50 V
Maximum DC Collector Current	500 mA
Maximum Emitter Base Voltage	10 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23(TO-236AB)
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN