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PDTD123TT,215, Digital Transistors PDTD123TT/SOT23/TO-236AB
Semiconductors\Discrete Semiconductors\Transistors\Digital TransistorsResistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors.
Collector-Emitter Breakdown Voltage | 50V |
Maximum DC Collector Current | 500mA |
Pd - Power Dissipation | 250mW |
Transistor Type | NPN - Pre-Biased |
Maximum Collector Emitter Voltage | 50 V |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Temperature | +150 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23(TO-236AB) |
Pin Count | 3 |
Transistor Configuration | Single |
Typical Input Resistor | 2.2 kΩ |
Typical Resistor Ratio | None |
Вес, г | 1 |