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RN1104MFV,L3XHF(CT, Digital Transistors AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)

Semiconductors\Discrete Semiconductors\Transistors\Digital TransistorsRN Automotive Bias Resistor Built-in Transistors Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

Brand	Toshiba
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Single
Continuous Collector Current	100 mA
DC Collector/Base Gain hFE Min	80 at 10 mA, 5 V
Emitter- Base Voltage VEBO	10 V
Factory Pack Quantity	8000
Manufacturer	Toshiba
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Package/Case	VESM-3
Part # Aliases	RN1104MFV, L3XHF(CB
Pd - Power Dissipation	150 mW
Product Category	Digital Transistors
Product Type	Digital Transistors
Qualification	AEC-Q200
Subcategory	Transistors
Transistor Polarity	NPN
Typical Input Resistor	47 kOhms
Typical Resistor Ratio	1