Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

RN1108MFV,L3F

Биполярный транзистор с предварительным смещением (BJT) NPN - с предварительным смещением 50 В 100 мА 150 мВт Поверхностный монтаж VESM

Base Product Number	TB67S142 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-723
Power - Max	150mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms
RoHS Status	RoHS Compliant
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 500ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	Toshiba
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Single
DC Collector/Base Gain hFE Min	80
Emitter- Base Voltage VEBO	7 V
Factory Pack Quantity	8000
Manufacturer	Toshiba
Maximum DC Collector Current	100 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package/Case	VESM-3
Pd - Power Dissipation	150 mW
Product Category	Digital Transistors
Product Type	Digital Transistors
Qualification	AEC-Q101
Subcategory	Transistors
Transistor Polarity	NPN
Typical Input Resistor	47 kOhms