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RN1418,LF

Биполярный транзистор с предварительным смещением (BJT) NPN - с предварительным смещением 50 В 100 мА 250 МГц 200 мВт S-Mini для поверхностного монтажа

Base Product Number	HN1D02 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	10 kOhms
RoHS Status	RoHS non-compliant
Supplier Device Package	S-Mini
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 250ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	Toshiba
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Single
DC Collector/Base Gain hFE Min	50
Emitter- Base Voltage VEBO	25 V
Factory Pack Quantity	3000
Manufacturer	Toshiba
Maximum DC Collector Current	100 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package/Case	SC-59-3
Pd - Power Dissipation	200 mW
Product Category	Digital Transistors
Product Type	Digital Transistors
Qualification	AEC-Q101
Subcategory	Transistors
Transistor Polarity	NPN
Typical Input Resistor	47 kOhms