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RN1703JE(TE85L,F)

Биполярный транзистор с предварительным смещением (BJT) 2 NPN - с предварительным смещением (двойной) (с эмиттерной связью) 50 В 100 мА 250 МГц 100 мВт ESV для поверхностного монтажа

Base Product Number	TCR2LF ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-553
Power - Max	100mW
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
RoHS Status	RoHS Compliant
Supplier Device Package	ESV
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300mV @ 250ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	Toshiba
Channel Mode	Enhancement
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Dual
Continuous Collector Current	100 mA
DC Collector/Base Gain hfe Min	70
Emitter- Base Voltage VEBO	10 V
Factory Pack Quantity	4000
Manufacturer	Toshiba
Maximum DC Collector Current	100 mA
Maximum Operating Frequency	250 MHz
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	ESV-5
Packaging	Reel, Cut Tape
Pd - Power Dissipation	100 mW
Peak DC Collector Current	100 mA
Product Category	Digital Transistors
Product Type	Digital Transistors
Subcategory	Transistors
Transistor Polarity	NPN
Typical Input Resistor	22 kOhms
Typical Resistor Ratio	1