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RN2425(TE85L,F)

Биполярный транзистор с предварительным смещением (BJT) PNP - с предварительным смещением 50 В 800 мА 200 МГц 200 мВт S-Mini для поверхностного монтажа

Base Product Number	RN2107 ->
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 100mA, 1V
ECCN	EAR99
Frequency - Transition	200MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200mW
Resistor - Emitter Base (R2)	10 kOhms
RoHS Status	RoHS non-compliant
Supplier Device Package	S-Mini
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	Toshiba
Collector- Base Voltage VCBO	-50 V
Collector- Emitter Voltage VCEO Max	-50 V
Configuration	Single
DC Collector/Base Gain hFE Min	90
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	3000
Manufacturer	Toshiba
Maximum DC Collector Current	-800 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package/Case	SC-59-3
Pd - Power Dissipation	200 mW
Product Category	Digital Transistors
Product Type	Digital Transistors
Subcategory	Transistors
Transistor Polarity	PNP
Typical Input Resistor	47 kOhms