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RN4985FE,LF(CT

Биполярный транзистор с предварительным смещением (BJT) 1 NPN, 1 PNP - с предварительным смещением (двойной) 50 В 100 мА 250 МГц, 200 МГц 100 мВт поверхностный монтаж ES6

Base Product Number	RN1119 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz, 200MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-563, SOT-666
Power - Max	100mW
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	47kOhms
RoHS Status	RoHS non-compliant
Supplier Device Package	ES6
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300mV @ 250ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	Toshiba
Collector- Base Voltage VCBO	-50 V, 50 V
Collector- Emitter Voltage VCEO Max	-50 V, 50 V
Configuration	Dual
DC Collector/Base Gain hFE Min	80
Emitter- Base Voltage VEBO	-5 V, 5 V
Factory Pack Quantity	4000
Manufacturer	Toshiba
Maximum DC Collector Current	-100 mA, 100 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package/Case	ES-6
Pd - Power Dissipation	100 mW
Product Category	Digital Transistors
Product Type	Digital Transistors
Subcategory	Transistors
Transistor Polarity	NPN, PNP
Typical Input Resistor	47 kOhms