Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SMUN5311DW1T2G, Digital Transistors SS BR XSTR DUAL 50V
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors35@5mA,10V 1 NPN,1 PNP - Pre-Biased 187mW 100mA 50V SOT-363 Digital Transistors ROHS
| Brand | onsemi |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 35 |
| Factory Pack Quantity | 3000 |
| Manufacturer | onsemi |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Pd - Power Dissipation | 250 mW |
| Product Category | Digital Transistors |
| Product Type | Digital Transistors |
| Qualification | AEC-Q100 |
| Subcategory | Transistors |
| Transistor Polarity | NPN, PNP |
| Typical Input Resistor | 10 kOhms |
| Typical Resistor Ratio | 1 |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| DC Current Gain (hFE@Ic,Vce) | 35@5mA, 10V |
| Power Dissipation (Pd) | 187mW |
| Transistor Type | 1 NPN, 1 PNP-Pre-Biased |
| Вес, г | 0.01 |
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