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Цена по запросу
UMH4NTN
100@1mA,5V 2 NPN - Pre-Biased 150mW 100mA 50V 500nA SOT-363 Digital Transistors ROHS
| Collector Current (Ic) | 100mA |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA, 1mA |
| DC Current Gain (hFE@Ic,Vce) | 100@1mA, 5V |
| Power Dissipation (Pd) | 150mW |
| Transistor Type | 2 NPN-Pre-Biased |
| Transition Frequency (fT) | 250MHz |
| Brand | ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 100 |
| DC Current Gain hFE Max | 600 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Manufacturer | ROHM Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | UMT-6 |
| Part # Aliases | UMH4N |
| Pd - Power Dissipation | 150 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Digital Transistors |
| Product Type | Digital Transistors |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Typical Input Resistor | 10 kOhms |
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