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2N7000-D26Z, MOSFETs N-CHANNEL 60V 200mA
Unclassified Описание Транзистор: N-MOSFET; полевой; 60В; 0,2А; Idm: 0,5А; 0,4Вт; TO92 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | onsemi/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2000 |
| Forward Transconductance - Min | 0.1 S |
| Id - Continuous Drain Current | 200 mA |
| Manufacturer | onsemi |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Reel, Cut Tape |
| Part # Aliases | 2N7000_D26Z |
| Pd - Power Dissipation | 400 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| Series | 2N7000 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Resistance | 9 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -40 V, +40 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 400 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 4.19mm |
| Forward Diode Voltage | 1.5V |
| Maximum Gate Threshold Voltage | 3V |
| Вес, г | 0.515 |
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