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![MMBFJ111, Транзистор N-JFET 35В 0.05 0.35Вт [SOT-23-3]](/images/placeholder.jpg)
Цена по запросу
MMBFJ111, Транзистор N-JFET 35В 0.05 0.35Вт [SOT-23-3]
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
| Brand | ON Semiconductor/Fairchild |
| Configuration | Single |
| Drain-Source Current at Vgs=0 | 5 mA |
| Factory Pack Quantity | 3000 |
| Gate-Source Cutoff Voltage | -10 V |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 C to+150 C |
| Package / Case | SOT-23 |
| Packaging | Cut Tape |
| Part # Aliases | MMBFJ111_NL |
| Pd - Power Dissipation | 350 mW |
| Product Category | JFET |
| Rds On - Drain-Source Resistance | 30 Ohms |
| RoHS | Details |
| Series | MMBFJ111 |
| Transistor Polarity | N-Channel |
| Type | JFET |
| Unit Weight | 0.000282 oz |
| Vgs - Gate-Source Breakdown Voltage | -35 V |
| Вес, г | 0.1 |
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