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2N7000-D26Z, Транзистор: N-MOSFET; полевой; 60В; 0,2А; Idm: 0,5А; 0,4Вт; TO92

Описание Транзистор: N-MOSFET; полевой; 60В; 0,2А; Idm: 0,5А; 0,4Вт; TO92 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Brand	onsemi/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2000
Forward Transconductance - Min	0.1 S
Id - Continuous Drain Current	200 mA
Manufacturer	onsemi
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-92-3
Packaging	Reel, Cut Tape
Part # Aliases	2N7000_D26Z
Pd - Power Dissipation	400 mW
Product Category	MOSFET
Product Type	MOSFET
Product	MOSFET Small Signal
Rds On - Drain-Source Resistance	1.2 Ohms
Series	2N7000
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	800 mV
Channel Type	N
Maximum Continuous Drain Current	200 mA
Maximum Drain Source Resistance	9 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-40 V, +40 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	400 mW
Minimum Gate Threshold Voltage	0.8V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-92
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Width	4.19mm
Forward Diode Voltage	1.5V
Maximum Gate Threshold Voltage	3V
Вес, г	0.515