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мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
2N7002BKW,115, MOSFETs 2N7002BKW/SOT323/SC-70
UnclassifiedТранзистор полевой MOSFET N-канальный 60В 310мА, 0.88Вт
Brand | Nexperia |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 7 ns |
Id - Continuous Drain Current | 310 mA |
Manufacturer | Nexperia |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | SOT-323-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 330 mW(1/3 W) |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 0.5 nC |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Rise Time | 6 ns |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel Trench MOSFET |
Type | Enhancement |
Typical Turn-Off Delay Time | 12 ns |
Typical Turn-On Delay Time | 5 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 1.1 V |
Channel Type | N |
Maximum Continuous Drain Current | 310 mA |
Maximum Drain Source Resistance | 2 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 330 mW |
Minimum Gate Threshold Voltage | 1.1V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-323 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 0.5 nC @ 4.5 V |
Width | 1.35mm |
Continuous Drain Current (Id) | 310mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.6Ω@10V, 500mA |
Drain Source Voltage (Vdss) | 60V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA |
Input Capacitance (Ciss@Vds) | 50pF@10V |
Power Dissipation (Pd) | 275mW |
Total Gate Charge (Qg@Vgs) | 600pC@4.5V |
Вес, г | 0.005 |