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2N7002K-7, MOSFET N-CH 60V 380MA SOT23-3
Semiconductors\Discrete Semiconductors\Transistors\MOSFET Описание Транзистор N-MOSFET, полевой, 60В, 0,31А, 0,37Вт, SOT23
Continuous Drain Current (Id) @ 25В°C | 380mA |
Power Dissipation-Max (Ta=25В°C) | 370mW |
Rds On - Drain-Source Resistance | 2О© @ 500mA,10V |
Transistor Polarity | N Channel |
Vds - Drain-Source Breakdown Voltage | 60V |
Vgs - Gate-Source Voltage | 2.5V @ 1mA |
Brand | Diodes Incorporated |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity: Factory Pack Quantity | 3000 |
Fall Time | 9.9 ns |
Id - Continuous Drain Current | 380 mA |
Manufacturer | Diodes Incorporated |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Pd - Power Dissipation | 540 mW |
Product Category | MOSFET |
Product Type | MOSFET |
Product | MOSFET Small Signal |
Qg - Gate Charge | 300 pC |
Rds On - Drain-Source Resistance | 2 Ohms |
Rise Time | 3.4 ns |
Series | 2N7002K |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 15.7 ns |
Typical Turn-On Delay Time | 3.9 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Channel Type | N |
Maximum Continuous Drain Current | 380 mA |
Maximum Drain Source Resistance | 3 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 540 mW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 0.3 nC @ 4.5 V |
Width | 1.4mm |
Вес, г | 0.05 |