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Цена по запросу
2SK208-R(TE85L,F), JFETs Junction FET N-Ch 0.3 to 6.5mA 10mA
UnclassifiedA range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
| кол-во в упаковке | 1 |
| Brand | Toshiba |
| Configuration | Single |
| Drain-Source Current at Vgs=0 | 0.3 mA |
| Factory Pack Quantity | 3000 |
| Gate-Source Cutoff Voltage | -5 V |
| Id - Continuous Drain Current | 6.5 mA |
| Manufacturer | Toshiba |
| Mounting Style | SMD/SMT |
| Package / Case | SC-59-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 100 mW |
| Product Category | JFET |
| RoHS | Details |
| Series | 2SK208 |
| Transistor Polarity | N-Channel |
| Unit Weight | 0.000282 oz |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Vgs - Gate-Source Breakdown Voltage | -30 V |
| Channel Type | N |
| Idss Drain-Source Cut-off Current | 0.3 to 0.75mA |
| Maximum Drain Gate Voltage | -50V |
| Maximum Drain Source Voltage | 10 V |
| Maximum Gate Source Voltage | -30 V |
| Maximum Operating Temperature | +125 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-346(SC-59) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Width | 1.5mm |
| Вес, г | 0.05 |
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