Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
2SK208-Y(TE85L,F), JFETs Junction FET N-Ch 0.3 to 6.5mA 10mA
UnclassifiedJFET N-Channel 50 В 6,5 мА 100 мВт S-Mini для поверхностного монтажа
| Brand | Toshiba |
| Configuration | Single |
| Drain-Source Current at Vgs=0 | 1.2 mA |
| Factory Pack Quantity | 3000 |
| Gate-Source Cut-off Voltage | -5 V |
| Id - Continuous Drain Current | 6.5 mA |
| Manufacturer | Toshiba |
| Mounting Style | SMD/SMT |
| Package/Case | SC-59-3 |
| Pd - Power Dissipation | 100 mW |
| Product Category | JFET |
| Product Type | JFETs |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Type | JFET |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Vgs - Gate-Source Breakdown Voltage | -30 V |
| Base Product Number | TC74VCX162 -> |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V |
| Current Drain (Id) - Max | 6.5mA |
| ECCN | EAR99 |
| FET Type | N-Channel |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 125В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 100mW |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | S-Mini |
| Voltage - Breakdown (V(BR)GSS) | 50V |
| Voltage - Cutoff (VGS off) @ Id | 400mV @ 100nA |
| Pd - Power Dissipation | 100mW |
| Transistor Polarity | N Trench |
| Drain Current (Idss@Vds,Vgs=0) | 1.2mA@10V |
| Gate-Source Breakdown Voltage (V(BR)GSS) | 50V |
| Gate-Source Cutoff Voltage (VGS(off)@ID) | 400mV@100nA |
| Input Capacitance (Ciss@Vds) | 8.2pF@10V |
| Static Drain-Source On Resistance (RDS(on)) | - |
| Total Device Dissipation (Pd) | 100mW |
| Вес, г | 0.008 |
Похожие товары
Цена по запросу
