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Цена по запросу
2SK209-Y(TE85L,F), SOT-346 MOSFETs ROHS
Semiconductors\Discrete Semiconductors\Transistors\JFETA range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
| Brand | Toshiba |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Gate-Source Cutoff Voltage | - 1.5 V |
| Id - Continuous Drain Current | 14 mA |
| Manufacturer | Toshiba |
| Maximum Drain Gate Voltage | - 50 V |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-346-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | JFET |
| Series | 2SK209 |
| Transistor Polarity | N-Channel |
| Type | JFET |
| Channel Type | N |
| Idss Drain-Source Cut-off Current | 1.2 to 3.0mA |
| Maximum Drain Source Voltage | 10 V |
| Maximum Gate Source Voltage | -30 V |
| Maximum Operating Temperature | +125 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-346(SC-59) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Width | 1.5mm |
| Вес, г | 5 |
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