Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
AO3404A, Транзистор N-МОП, полевой, 30В, 4,9А, 1,4Вт, SOT23
Транзистор N-МОП, полевой, 30В, 4,9А, 1,4Вт, SOT23
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Product Category | Power MOSFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 5.8 |
Maximum Drain Source Resistance (mOhm) | 25@10V |
Typical Gate Charge @ Vgs (nC) | 7.1@10V|3.3@4.5V |
Typical Gate Charge @ 10V (nC) | 7.1 |
Typical Input Capacitance @ Vds (pF) | 373@15V |
Maximum Power Dissipation (mW) | 1400 |
Typical Fall Time (ns) | 2.5 |
Typical Rise Time (ns) | 2.4 |
Typical Turn-Off Delay Time (ns) | 14.8 |
Typical Turn-On Delay Time (ns) | 4.5 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | Unknown |
Pin Count | 3 |
Supplier Package | SOT-23 |
Standard Package Name | SOT-23 |
Military | No |
Mounting | Surface Mount |
Package Height | 1 |
Package Length | 2.9 |
Package Width | 1.6 |
PCB changed | 3 |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current - (A) | 5.8 |
Maximum Drain Source Resistance - (mOhm) | 25@10V |
Maximum Drain Source Voltage - (V) | 30 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Power Dissipation - (mW) | 1400 |
Operating Temperature - (??C) | -55~150 |
Typical Gate Charge @ 10V - (nC) | 7.1 |
Typical Gate Charge @ Vgs - (nC) | 7.1@10VI3.3@4.5V |
Typical Input Capacitance @ Vds - (pF) | 373@15V |
Case | SOT23 |
Drain current | 4.9A |
Drain-source voltage | 30V |
Gate charge | 3.3nC |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Manufacturer | ALPHA & OMEGA SEMICONDUCTOR |
On-state resistance | 25mΩ |
Polarisation | unipolar |
Power dissipation | 1.4W |
Type of transistor | N-MOSFET |
Вес, г | 0.027 |