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Цена по запросу
AOD66923
ЭлектроэлементТранзистор N-MOSFET, полевой, 100В, 36,5А, 29Вт, TO252
| Continuous Drain Current (Id) | 16.5A;58A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9.2mΩ@10V, 20A |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.6V@250uA |
| Input Capacitance (Ciss@Vds) | 1.725nF@50V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 6.2W;73W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF@50V |
| Total Gate Charge (Qg@Vgs) | 35nC@10V |
| Type | N Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A(Ta), 58A(Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 50 V |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK(2 Leads+Tab), SC-63 |
| Power Dissipation (Max) | 6.2W(Ta), 73W(Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| Supplier Device Package | TO-252(DPAK) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
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