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Цена по запросу
AUIRFR120Z
ЭлектроэлементТранзистор: N-MOSFET; полевой; HEXFET; 100В; 8,7А; 35Вт; DPAK
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 8.7A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Family | FETs-Single |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 310pF @ 25V |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Tube |
| PCN Assembly/Origin | AUIRFxx Series Wafer Process 29/Jul/2013 |
| Power - Max | 35W |
| Product Training Modules | High Voltage Integrated Circuits(HVIC Gate Drivers) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 5.2A, 10V |
| Series | HEXFET® |
| Standard Package | 75 |
| Supplier Device Package | D-Pak |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Вес, г | 0.36 |
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