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Цена по запросу
BS107P, MOSFETs N-Chnl 200V
Unclassified Описание Транзистор: N-MOSFET, полевой, 200В, 0,12А, 0,5Вт, TO92 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 4000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 100 mS |
| Id - Continuous Drain Current | 120 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 500 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Product | MOSFET Small Signals |
| Rds On - Drain-Source Resistance | 30 Ohms |
| Rise Time | 8 ns |
| Series | BS107 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 16 ns |
| Typical Turn-On Delay Time | 7 ns |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Factory Pack Quantity | 4000 |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 15 Ohms |
| RoHS | Details |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 2.41 mm |
| Вес, г | 0.16 |
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