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BSC020N03LSGATMA1, Силовой МОП-транзистор, N Канал, 30 В, 100 А, 0.0017 Ом, PG-TDSON, Surface Mount

Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	28
Maximum Drain Source Resistance (mOhm)	2 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.2
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2500
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	OptiMOS
Product Category	Power MOSFET
Standard Package Name	SON
Supplier Package	TDSON EP
Typical Fall Time (ns)	7
Typical Gate Charge @ 10V (nC)	70
Typical Gate Charge @ Vgs (nC)	70 10V\|34 4.5V
Typical Input Capacitance @ Vds (pF)	5400 15V
Typical Rise Time (ns)	7
Typical Turn-Off Delay Time (ns)	42
Typical Turn-On Delay Time (ns)	11
Forward Diode Voltage	1.1V
Maximum Continuous Drain Current	100 A
Maximum Drain Source Resistance	2.9 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	+20 V
Maximum Gate Threshold Voltage	2.2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	96 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	TDSON
Series	OptiMOS™ 3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	34 nC @ 4.5 V
Width	6.35mm
Вес, г	0.56