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Цена по запросу
BSC039N06NS, DFN-85.1x5.9 MOSFETs ROHS
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 5.9 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 69 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Series | OptiMOS 5 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V |
| Width | 5.35mm |
| Automotive | No |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 19 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 3.9@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Resistance (Ohm) | 2.4 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 400 |
| Minimum Gate Threshold Voltage (V) | 2.1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | OptiMOS |
| Product Category | Power MOSFET |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Fall Time (ns) | 7 |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Typical Gate Plateau Voltage (V) | 4.8 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Drain Charge (nC) | 5 |
| Typical Gate to Source Charge (nC) | 9 |
| Typical Input Capacitance @ Vds (pF) | 2000@30V |
| Typical Output Capacitance (pF) | 490 |
| Typical Reverse Recovery Charge (nC) | 28 |
| Typical Reverse Recovery Time (ns) | 32 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 22@30V |
| Typical Rise Time (ns) | 12 |
| Typical Switch Charge (nC) | 9 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Вес, г | 0.151 |
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