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BSR58

ЭлектроэлементJFETS (JUNCTION FIELD EFFECT); Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss Min:8mA; Zero Gate Voltage Drain Current Idss Max:80mA; Gate-Source Cutoff Voltage Vgs(off) Max:4V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Idss Max:80mA; Current Idss Min:8mA; No. of Pins:3Pins; Operating Temperature Min:-55°C; Power Dissipation Pd:250mW; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Zero Gate Voltage Drain Current Idss:8mA to 80mA

Channel Type	N
Configuration	Single
Drain-Gate Voltage (Max)	40(V)
Gate-Source Voltage (Max)	-40(V)
Mounting	Surface Mount
Operating Temperature (Max)	150C
Operating Temperature (Min)	-55C
Operating Temperature Classification	Military
Package Type	SOT-23
Packaging	Tape and Reel
Pin Count	3
Rad Hardened	No
Idss Drain-Source Cut-off Current	8 to 80mA
Maximum Drain Gate Voltage	40V
Maximum Drain Source Voltage	0.4 V
Maximum Gate Source Voltage	-40 V
Maximum Operating Temperature	+150 °C
Mounting Type	Surface Mount
Transistor Configuration	Single
Width	1.3mm
Brand	onsemi/Fairchild
Drain-Source Current at Vgs=0	80 mA
Factory Pack Quantity: Factory Pack Quantity	3000
Manufacturer	onsemi
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Part # Aliases	BSR58_NL
Pd - Power Dissipation	250 mW
Product Category	JFET
Product Type	JFETs
Rds On - Drain-Source Resistance	60 Ohms
Series	BSR58
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Type	JFET
Vgs - Gate-Source Breakdown Voltage	-40 V
Вес, г	0.05