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Цена по запросу
BSS123W-7-F, Транзистор N-MOSFET, полевой, 100В, 0,17А, 200мВт, SOT323
Описание Транзистор N-MOSFET, полевой, 100В, 0,17А, 200мВт, SOT323 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Lead Shape | Gull-wing |
Package Height | 0.95 |
Package Width | 1.3 |
Package Length | 2.15 |
Mounting | Surface Mount |
PCB changed | 3 |
Product Category | Small Signal |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 0.17 |
Maximum Drain Source Resistance (mOhm) | 6000@10V |
Typical Input Capacitance @ Vds (pF) | 29@25V |
Maximum Power Dissipation (mW) | 200 |
Typical Fall Time (ns) | 16(Max) |
Typical Rise Time (ns) | 8(Max) |
Typical Turn-Off Delay Time (ns) | 13(Max) |
Typical Turn-On Delay Time (ns) | 8(Max) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Supplier Temperature Grade | Automotive |
Automotive | No |
Supplier Package | SOT-323 |
Standard Package Name | SOT |
Pin Count | 3 |
Military | No |
Base Product Number | BSS123 -> |
Current - Continuous Drain (Id) @ 25В°C | 170mA (Ta) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
ECCN | EAR99 |
FET Type | N-Channel |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | SC-70, SOT-323 |
Power Dissipation (Max) | 200mW (Ta) |
Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-323 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Continuous Drain Current (Id) @ 25В°C | 170mA |
Power Dissipation-Max (Ta=25В°C) | 200mW |
Rds On - Drain-Source Resistance | 6О© @ 170mA,10V |
Transistor Polarity | N Channel |
Vds - Drain-Source Breakdown Voltage | 100V |
Vgs - Gate-Source Voltage | 2V @ 1mA |
Maximum Continuous Drain Current | 170 mA |
Maximum Drain Source Resistance | 10 Ω |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum Operating Temperature | -55 °C |
Package Type | SOT-323 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 1.35mm |
Вес, г | 0.03 |