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Цена по запросу
BSS127S-7, Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R
Описание Транзистор N-MOSFET, полевой, 600В, 0,07А, 0,61/1,25Вт, SOT23 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| Lead Shape | Gull-wing |
| Package Height | 0.98 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| PCB changed | 3 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Continuous Drain Current (A) | 0.07 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 0.1 |
| Maximum Drain Source Resistance (mOhm) | 160000@10V |
| Typical Gate Charge @ Vgs (nC) | 1.08@10V |
| Typical Gate Charge @ 10V (nC) | 1.08 |
| Typical Input Capacitance @ Vds (pF) | 21.8@25V |
| Maximum Power Dissipation (mW) | 1250 |
| Typical Fall Time (ns) | 168 |
| Typical Rise Time (ns) | 7.2 |
| Typical Turn-Off Delay Time (ns) | 28.7 |
| Typical Turn-On Delay Time (ns) | 5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Pin Count | 3 |
| Military | No |
| Brand | Diodes Incorporated |
| Factory Pack Quantity | 3000 |
| Fall Time | 168 ns |
| Id - Continuous Drain Current | 70 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Pd - Power Dissipation | 1.25 W |
| Product Type | MOSFET |
| Rds On - Drain-Source Resistance | 160 Ohms |
| Rise Time | 7.2 ns |
| Series | BSS127 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 28.7 ns |
| Typical Turn-On Delay Time | 5 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 3 V |
| Maximum Continuous Drain Current | 70 mA |
| Maximum Drain Source Resistance | 190 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 1.25 W |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.08 nC @ 10 V |
| Width | 1.4mm |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Product Category | MOSFET |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Вес, г | 0.005 |
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