Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
BSZ160N10NS3G
Электроэлемент100V 8A 2.1W 16mOhm@10V,20A 3.5V@33uA N Channel TSDSON-8(3.3x3.3) MOSFETs
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 5000 |
Fall Time | 5 ns |
Forward Transconductance - Min | 16 S |
Height | 1.1 mm |
Id - Continuous Drain Current | 40 A |
Length | 3.3 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TSDSON-8 |
Packaging | Reel |
Part # Aliases | BSZ160N10NS3GATMA1 BSZ160N10NS3GXT SP000482390 |
Pd - Power Dissipation | 63 W |
Product Category | MOSFET |
Qg - Gate Charge | 25 nC |
Rds On - Drain-Source Resistance | 14 mOhms |
Rise Time | 10 ns |
RoHS | Details |
Series | OptiMOS 3 |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 13 ns |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Width | 3.3 mm |
Configuration | Single |
Factory Pack Quantity: Factory Pack Quantity | 5000 |
Part # Aliases | SP000482390 BSZ16N1NS3GXT BSZ160N10NS3GATMA1 |
Product Type | MOSFET |
Subcategory | MOSFETs |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Вес, г | 0.3 |