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Цена по запросу
CE3512K2, RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C
RF & Wireless\RF Transistors\RF JFET TransistorsLow Noise FETs & ICs CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
| Brand | CEL |
| Configuration | Single |
| Factory Pack Quantity | 1 |
| Forward Transconductance - Min | 54 mS |
| Gain | 13.7 dB |
| Gate-Source Cut-off Voltage | -750 mV |
| Id - Continuous Drain Current | 10 mA |
| Manufacturer | CEL |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| NF - Noise Figure | 0.3 dB |
| Operating Frequency | 12 GHz |
| Package/Case | MICRO-X-4 |
| Packaging | Bulk |
| Pd - Power Dissipation | 125 mW |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaAs |
| Transistor Type | pHEMT |
| Vds - Drain-Source Breakdown Voltage | 4 V |
| Vgs - Gate-Source Breakdown Voltage | -3 V |
| Current - Test | 10mA |
| Current Rating (Amps) | 15mA |
| Frequency | 12GHz |
| Gain | 13.7dB |
| Noise Figure | 0.5dB |
| Package / Case | 4-Micro-X |
| Packaging | Strip |
| Part Status | Active |
| Power - Output | 125mW |
| Supplier Device Package | 4-Micro-X |
| Transistor Type | pHEMT FET |
| Voltage - Rated | 4V |
| Voltage - Test | 2V |
| Вес, г | 0.02 |
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