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Цена по запросу
CG2H40045F, GaN FETs GaN HEMT DC-4.0GHz, 45 Watt
UnclassifiedCG2H40xx & CG2H30xx GaN HEMTs MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.
| Brand | MACOM |
| Development Kit | CG2H40045F-TB |
| Factory Pack Quantity | 20 |
| Gain | 16 dB |
| Id - Continuous Drain Current | 6 A |
| Manufacturer | MACOM |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Operating Frequency | DC to 4 GHz |
| Output Power | 45 W |
| Package/Case | 440193 |
| Packaging | Tray |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V, 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3.8 V |
| Вес, г | 10 |
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