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CG2H80060D-GP4, GaN FETs GaN HEMT Die DC-8.0GHz, 60 Watt
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| Brand | MACOM |
| Factory Pack Quantity | 1 |
| Gain | 15 dB |
| Id - Continuous Drain Current | 6 A |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 8 GHz |
| Maximum Operating Temperature | +225 C |
| Minimum Operating Frequency | 0 Hz |
| Mounting Style | SMD/SMT |
| Output Power | 60 W |
| Package/Case | Die |
| Packaging | Gel Pack |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V, 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3.8 V |
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