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Цена по запросу
CGH27030S, GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Unclassified
| Application | Telecom |
| Brand | MACOM |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Gain | 18 dB |
| Id - Continuous Drain Current | 7 A |
| Manufacturer | MACOM |
| Maximum Drain Gate Voltage | 28 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Operating Frequency | 2.7 GHz |
| Operating Temperature Range | -40 C to+150 C |
| Output Power | 30 W |
| Pd - Power Dissipation | 21.6 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 84 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V, 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3.8 V |
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