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Цена по запросу
CGH31240F, GaN FETs 240W, 3.1GHz, 830163F, GaN HEMT, 28V, FL
Unclassified
| Brand | MACOM |
| Factory Pack Quantity | 10 |
| Gain | 12 dB |
| Id - Continuous Drain Current | 24 A |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 3.1 GHz |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Frequency | 2.7 GHz |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Output Power | 240 W |
| Package/Case | 440201 |
| Packaging | Tray |
| Pd - Power Dissipation | 345 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Product | GaN HEMTs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Type | GaN SiC HEMT |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V to 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
| Вес, г | 33 |
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