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Цена по запросу
CGH55015F2, GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt
UnclassifiedGaN HEMTs MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.
| Brand | MACOM |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Gain | 12 dB |
| Id - Continuous Drain Current | 1.5 A |
| Manufacturer | MACOM |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Operating Frequency | 4.5 GHz to 6 GHz |
| Output Power | 10 W |
| Package/Case | 440166 |
| Packaging | Tray |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Product | GaN HEMTs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V to 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
| Вес, г | 0.5 |
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