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CGHV1F006S, GaN FETs GaN HEMT DC-18GHz, 6 Watt
UnclassifiedX-Band GaN HEMTs & MMICs MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
| Brand | MACOM |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Gain | 16 dB |
| Id - Continuous Drain Current | 950 mA |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 18 GHz |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Frequency | 0 Hz |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 6 W |
| Package/Case | DFN-12 |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V to 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
| Вес, г | 2 |
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