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Цена по запросу
CGHV35400F1, GaN FETs 400W, GaN HEMT, 50V, 2.9-3.5GHz, IM FET, Flange
UnclassifiedCGHV35400F 400W 50Ω I/O Matched GaN HEMT Wolfspeed CGHV35400F 400W 2.9GHz to 3.5GHz, 50Ω I/O Matched GaN HEMT for S-Band radar amplifier applications offers high efficiency, high gain, and vast bandwidth capabilities. The CGHV35400F transistor is matched to 50 ohms on the input and 50 ohms on the output.
| Brand | MACOM |
| Factory Pack Quantity | 20 |
| Gain | 11 dB |
| Id - Continuous Drain Current | 24 A |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 3.5 GHz |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Frequency | 2.9 GHz |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Output Power | 400 W |
| Package/Case | 440225 |
| Packaging | Tray |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V, 2 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
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