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Цена по запросу
CGHV40200PP, GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
UnclassifiedCGHV40200PP GaN HEMT MACOM CGHV40200PP Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) operates from a 50V rail and offers a broadband solution to RF and microwave applications. This transistor provides high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. MACOM CGHV40200PP GaN HEMT is available in a 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.
| Brand | MACOM |
| Configuration | Single |
| Development Kit | CGHV40200PP-AMP1 |
| Factory Pack Quantity | 20 |
| Gain | 16.1 dB |
| Id - Continuous Drain Current | 8.7 A |
| Manufacturer | MACOM |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Operating Frequency | 1.7 GHz to 1.9 GHz |
| Output Power | 250 W |
| Package/Case | 440199 |
| Packaging | Tray |
| Pd - Power Dissipation | 166 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V, 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
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