Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
CGHV40320D-GP4, GaN FETs GaN HEMT Die DC-4.0GHz, 320 Watt
UnclassifiedGaN HEMTs MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.
| Brand | MACOM |
| Factory Pack Quantity | 1 |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 4 GHz |
| Minimum Operating Frequency | 0 Hz |
| Mounting Style | SMD/SMT |
| Output Power | 320 W |
| Package/Case | Die |
| Packaging | Gel Pack |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Product | GaN HEMTs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Вес, г | 0.65 |
Похожие товары
Цена по запросу
