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Цена по запросу
CGHV59070F, GaN FETs GaN HEMT 4.4-5.9GHz, 70 Watt
UnclassifiedCGHV59070 70W RF Power GaN HEMT MACOM CGHV59070 RF Power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides a general-purpose, broadband solution to a variety of RF and microwave applications. Operating from a 50V rail, the module delivers high efficiency, high gain, and wide bandwidth capabilities. This 70W internally matched GaN HEMT is ideal for linear and compressed amplifier circuits. MACOM CGHV59070 70W RF Power GaN HEMT is offered in a 440224 package.
| Brand | MACOM |
| Factory Pack Quantity | 25 |
| Gain | 14 dB |
| Id - Continuous Drain Current | 6.3 A |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 5.9 GHz |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Frequency | 4.4 GHz |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw Mount |
| Output Power | 76 W |
| Package/Case | 440224 |
| Packaging | Tray |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V, 2 V |
| Вес, г | 8 |
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