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Цена по запросу
CGHV60075D5-GP4, GaN FETs GaN HEMT Die DC-6.0GHz, 75 Watt
UnclassifiedCGHV600 6GHz GaN HEMTs Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More
| Brand | MACOM |
| Factory Pack Quantity | 1 |
| Gain | 17 dB |
| Id - Continuous Drain Current | 10 A |
| Manufacturer | MACOM |
| Maximum Operating Frequency | 6 GHz |
| Minimum Operating Frequency | 0 Hz |
| Mounting Style | SMD/SMT |
| Output Power | 75 W |
| Package/Case | Die |
| Packaging | Gel Pack |
| Pd - Power Dissipation | 41.6 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Product | GaN HEMTs |
| Rds On - Drain-Source Resistance | 280 mOhms |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Breakdown Voltage | 150 V |
| Vgs th - Gate-Source Threshold Voltage | -10 V, 2 V |
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