Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
CSD17576Q5BT, MOSFETs 30V, N-channel NexFET Pwr MOSFET
Unclassified Описание Транзистор: N-MOSFET, полевой, 30В, 100А, 125Вт, VSON-CLIP8, 5x6мм Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 250 |
| Fall Time | 3 ns |
| Forward Transconductance - Min | 120 S |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-CLIP-8 |
| Pd - Power Dissipation | 125 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 68 nC |
| Rds On - Drain-Source Resistance | 2.4 mOhms |
| REACH - SVHC | Details |
| Rise Time | 16 ns |
| Series | CSD17576Q5B |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 5 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Case | VSON-CLIP8 |
| Dimensions | 5x6mm |
| Drain current | 100A |
| Drain-source voltage | 30V |
| Gate charge | 25nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | TEXAS INSTRUMENTS |
| Mounting | SMD |
| On-state resistance | 2.4mΩ |
| Polarisation | unipolar |
| Power dissipation | 125W |
| Technology | NexFET™ |
| Type of transistor | N-MOSFET |
| Вес, г | 1 |
Похожие товары
Цена по запросу
