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CSD19505KCS, Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3

Описание Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	50
Fall Time	6 ns
Forward Transconductance - Min	262 S
Id - Continuous Drain Current	100 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	300 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	76 nC
Rds On - Drain-Source Resistance	3.1 mOhms
Rise Time	16 ns
Series	CSD19505KCS
Subcategory	MOSFETs
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vds - Drain-Source Breakdown Voltage	80 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.6 V
Automotive	No
Channel Type	N
Maximum Continuous Drain Current - (A)	150
Maximum Drain Source Resistance - (mOhm)	3.1@10V
Maximum Drain Source Voltage - (V)	80
Maximum Gate Source Voltage - (V)	?20
Maximum Gate Threshold Voltage - (V)	3.2
Maximum Power Dissipation - (mW)	300000
Military	No
Number of Elements per Chip	1
Operating Temperature - (?C)	-55~175
Pin Count	3
Process Technology	NexFET
Supplier Package	TO-220
Typical Gate Charge @ 10V - (nC)	76
Typical Gate Charge @ Vgs - (nC)	76@10V
Typical Input Capacitance @ Vds - (pF)	6090@40V
Вес, г	3.652