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Цена по запросу
CSD19537Q3T, MOSFETs 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
Unclassified Описание Транзистор: N-MOSFET, полевой, 100В, 50А, 83Вт, VSON-CLIP8 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 750 |
| Fall Time | 3 ns |
| Forward Transconductance - Min | 45 S |
| Id - Continuous Drain Current | 53 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-CLIP-8 |
| Pd - Power Dissipation | 83 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 16 nC |
| Rds On - Drain-Source Resistance | 14.5 mOhms |
| Rise Time | 3 ns |
| Series | CSD19537Q3 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 5 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Вес, г | 0.363 |
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