Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
DMN3023L-7, MOSFET N-CH 30V 6.2A SOT23
Semiconductors\Discrete Semiconductors\Transistors\MOSFET Описание Транзистор N-MOSFET, полевой, 30В, 5,8А, 0,6Вт, SOT23
| Continuous Drain Current (Id) @ 25В°C | 6.2A |
| Power Dissipation-Max (Ta=25В°C) | 900mW |
| Rds On - Drain-Source Resistance | 25mО© @ 4A,10V |
| Transistor Polarity | N Channel |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Vgs - Gate-Source Voltage | 1.8V @ 250uA |
| Case | SOT23 |
| Drain current | 5.8A |
| Drain-source voltage | 30V |
| Features of semiconductor devices | ESD protected gate |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | DIODES INCORPORATED |
| Mounting | SMD |
| On-state resistance | 28mΩ |
| Polarisation | unipolar |
| Power dissipation | 0.6W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.121 |
Похожие товары
Цена по запросу
