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FDP42AN15A0, MOSFETs 150V 35a .42 Ohms/VGS=1V
Unclassified Описание Транзистор: N-MOSFET, полевой, 150В, 24А, 150Вт, TO220AB Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | onsemi/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 50 |
| Fall Time | 23 ns |
| Id - Continuous Drain Current | 35 A |
| Manufacturer | onsemi |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | FDP42AN15A0_NL |
| Pd - Power Dissipation | 150 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 36 nC |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Rise Time | 19 ns |
| Series | FDP42AN15A0 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 11 ns |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Current - Continuous Drain (Id) @ 25°C | 5A(Ta), 35A(Tc) |
| Drain to Source Voltage (Vdss) | 150V |
| Family | Transistors-FETs, MOSFETs-Single |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Manufacturer | Fairchild-Semiconductor |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Power - Max | 150W |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 12A, 10V |
| Series | PowerTrench® |
| Standard Package | 50 |
| Supplier Device Package | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Channel Type | N |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 150 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Width | 4.83mm |
| Вес, г | 2.003 |
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