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FQP45N15V2
Электроэлемент Описание Транзистор: N-MOSFET, полевой, 150В, 31А, 220Вт, TO220AB Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 246 ns |
| Forward Transconductance - Min | 40 S |
| Height | 16.3 mm |
| Id - Continuous Drain Current | 45 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | FQP45N15V2_NL |
| Pd - Power Dissipation | 220 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 40 mOhms |
| Rise Time | 232 ns |
| RoHS | Details |
| Series | FQP45N15V2 |
| Technology | Si |
| Tradename | QFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 224 ns |
| Typical Turn-On Delay Time | 22 ns |
| Unit Weight | 0.063493 oz |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.7 mm |
| Вес, г | 3.833 |
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