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Цена по запросу
GTVA126001EC-V1-R0, GaN FETs GaN HEMT 50V 1.2-1.4GHz 600W
UnclassifiedGTVA High-Power RF GaN on SiC HEMT Wolfspeed / Cree GTVA High-Power RF GaN on SiC HEMT are 50V high-electron-mobility transistors (HEMT) based on gallium-nitride on silicon carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High-Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These pulsed/CW (continuous-wave) devices have a pulse width of 128µs and a duty cycle of 10%.
| Brand | MACOM |
| Factory Pack Quantity | 50 |
| Gain | 18 dB |
| Id - Continuous Drain Current | 10 A |
| Manufacturer | MACOM |
| Mounting Style | Screw Mount |
| Operating Frequency | 1.2 GHz to 1.4 GHz |
| Output Power | 600 W |
| Package/Case | H-36248-2 |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN-on-SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V to 2 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
| Вес, г | 1 |
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