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GTVA262711FA-V2-R0, GaN FETs 300W GaN HEMT 48V 2496 to 2690MHz
Unclassified5G RF JFETs & LDMOS FETs MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN on SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for use in multi-standard cellular power amplifier applications.
| Application | Cellular Power Amplifier |
| Brand | MACOM |
| Factory Pack Quantity | 50 |
| Gain | 18 dB |
| Id - Continuous Drain Current | 12 A |
| Manufacturer | MACOM |
| Maximum Operating Temperature | +225 C |
| Mounting Style | Flange Mount |
| Operating Frequency | 2.62 GHz to 2.69 GHz |
| Output Power | 300 W |
| Package/Case | H-87265J-2 |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN-on-SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Vgs - Gate-Source Breakdown Voltage | -10 V to 2 V |
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