Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IXFH10N100P, MOSFETs 10 Amps 1000V
UnclassifiedHiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
| Brand | IXYS |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 30 |
| Fall Time | 75 ns |
| Forward Transconductance - Min | 4.2 S |
| Id - Continuous Drain Current | 10 A |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 380 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 56 nC |
| Rds On - Drain-Source Resistance | 1.4 Ohms |
| Rise Time | 45 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Polar HiPerFET Power MOSFET |
| Typical Turn-Off Delay Time | 47 ns |
| Typical Turn-On Delay Time | 38 ns |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Vgs - Gate-Source Voltage | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage | 6.5 V |
| Вес, г | 6.07 |
Похожие товары
Цена по запросу
